Si in GaN – on the nature of the background donor
نویسندگان
چکیده
A characterization of the Si impurity in GaN is performed by Raman spectroscopy. Applying hydrostatic pressure up to 25GPa we study the behavior of the LO phonon-plasmon mode in a series of high mobility Si doped GaN films. In contrast to earlier results on unintentionally doped bulk GaN crystals no freeze out of the free carriers could be observed in Si doped samples. We find that Si is a shallow hydrogenic donor throughout the pressure range studied. This result positively excludes Si incorporation as a dominant source of free electrons in previously studied bulk GaN samples. PACS: 62.50.+p, 71.55.Eq, 78.30.Fs, 72.20.Jv, 72.80.Ey gallium nitride, donor, Raman, hydrostatic pressure Physica Status Solidi (b) 198, 243 (1996)
منابع مشابه
Miniband formation engineering in GaN/AlN constant total effective radius multi-shells quantum dots and rings with on-center hydrogenic donor impurities
In this work, we have studied the miniband and minigaps of GaN/AlN constant total effective radius multi-shells quantum dots (CTER-MSQDs) and Rings (CTERMSQRs).We have investigated effects of the Hydrogenic donor impurities, quantum dots and rings radii, and the number of wells on miniband formation by sub-band energy calculations. We show that in these systems, minigaps can be created and then...
متن کاملSynthesis of Serrated GaN Nanowires for Hydrogen Gas Sensors Applications by Plasma-Assisted Vapor Phase Deposition Method
Nowadays, the semiconductor nanowires (NWs) typically used in hydrogen gas sensors. Gallium nitride (GaN) with a wide band gap of 3.4 eV, is one of the best semiconductors for this function. NWs surface roughness have important role in gas sensors performance. In this research, GaN NWs have been synthesized on Si substrate by plasma-assisted vapor phase deposition at different deposition time, ...
متن کاملMutual passivation of electrically active and isovalent impurities.
The alloy GaN(x) As(1-x) (with x typically less than 0.05) is a novel semiconductor that has many interesting electronic properties because of the nitrogen-induced dramatic modifications of the conduction band structure of the host material (GaAs). Here we demonstrate the existence of an entirely new effect in the GaN(x) As(1-x) alloy system in which the Si donor in the substitututional Ga site...
متن کاملوابستگی انرژی گذارهای اپتیکی در نانوساختارهای چاههای کوانتومی GaN/AlGaN به پهنای سد و چاه کوانتومی
Internal polarizations field which take place in quantum structures of group-III nitrides have an important consequence on their optical properties. Optical properties of wurtzite AlGaN/GaN quantum well (QW) structures grown by MBE and MOCVD on c-plane sapphire substrates have been investigated by means of photoluminescence (PL) and time resolved photoluminescence (TRPL) at low-temperature. PL ...
متن کاملA9.3 O, C, and other unintentional impurities in GaN and related compounds
Alloys of GaN, InN and AlN provide an ideal host with a wide range of the electronic bandgap but it is due to the control of impurities that allows to form devices. The role of unintentional impurities becomes especially important when their role as dopants is not established and their incorporation remains undetected. Oxygen concentrations up to some 10 cm are present in any high purity GaAs, ...
متن کامل